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BAP70-03
Silicon PIN diode
Rev. 05 -- 27 March 2007 Product data sheet
IMPORTANT NOTICE
Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors
NXP Semiconductors
Product specification
Silicon PIN diode
FEATURES * High voltage, current controlled RF resistor for attenuators * Low diode capacitance * Very low series inductance. APPLICATIONS * RF attenuators * (SAT)TV * Car radio. DESCRIPTION Planar PIN diode in a SOD323 (SC-76) small SMD plastic package.
Top view
BAP70-03
PINNING PIN 1 2 DESCRIPTION cathode anode
1
2
sym006
Marking code: A9. The marking bar indicates the cathode.
Fig.1
Simplified outline (SOD323; SC-76) and symbol.
ORDERING INFORMATION TYPE NUMBER BAP70-03 PACKAGE NAME - DESCRIPTION plastic surface mounted package; 2 leads VERSION SOD323
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF Ptot Tstg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 C CONDITIONS - - - -65 -65 MIN. MAX. 50 100 500 +150 +150 V mA mW C C UNIT
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NXP Semiconductors
Product specification
Silicon PIN diode
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF IR Cd PARAMETER forward voltage reverse leakage current diode capacitance VR = 50 V VR = 0 V; f = 1 MHz VR = 1 V; f = 1 MHz VR = 5 V; f = 1 MHz VR = 20 V; f = 1 MHz rD diode forward resistance IF = 0.5 mA; f = 100 MHz IF = 1 mA; f = 100 MHz IF = 10 mA; f = 100 MHz IF = 100 mA; f = 100 MHz L charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 ; measured at IR = 3 mA IF = 100 mA; f = 100 MHz CONDITIONS IF = 50 mA - 570 400 270 200 77 40 5.4 1.4 1.25 TYP. 0.9
BAP70-03
MAX. 1.1 100 - - - 250 100 50 7 1.9 - V
UNIT nA fF fF fF fF s
LS
series inductance
1.5
-
nH
THERMAL CHARACTERISTICS SYMBOL Rth(j-s) PARAMETER thermal resistance from junction to soldering point VALUE 120 UNIT K/W
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NXP Semiconductors
Product specification
Silicon PIN diode
GRAPHICAL DATA
BAP70-03
103 handbook, halfpage rD ()
MCE007
handbook, halfpage
600 Cd (fF) 500
MCE008
102
400
300
10
200
100
1 10-1
1
10 IF (mA)
102
0 0 5 10 15 VR (V) 20
Tj = 25 C; f = 100 MHz.
Tj = 25 C; f = 1 MHz.
Fig.2
Forward resistance as a function of forward current; typical values.
Fig.3
Diode capacitance as a function of reverse voltage; typical values.
Rev. 05 - 27 March 2007
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NXP Semiconductors
Product specification
Silicon PIN diode
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
BAP70-03
SOD323
D
A
E
X
HD
v
M
A
Q
1
2
bp A
A1
(1)
c Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.05 bp 0.40 0.25 c 0.25 0.10 D 1.8 1.6 E 1.35 1.15 HD 2.7 2.3 Lp 0.45 0.15 Q 0.25 0.15 v 0.2
Note 1. The marking bar indicates the cathode OUTLINE VERSION SOD323 REFERENCES IEC JEDEC JEITA SC-76 EUROPEAN PROJECTION ISSUE DATE 99-09-13 03-12-17
Rev. 05 - 27 March 2007
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NXP Semiconductors
BAP70-03
Silicon PIN diode
Legal information
Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 05 - 27 March 2007
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NXP Semiconductors
BAP70-03
Silicon PIN diode
Revision history
Revision history Document ID BAP70-03_N_5 Modifications: BAP70-03_4 (9397 750 12636) BAP70-03_3 (9397 750 10094) BAP70-03_N_2 (9397 750 10081) BAP70-03_N_1 (9397 750 09579) Release date 20070327 Data sheet status Product data sheet Product specification Product specification Preliminary specification Preliminary specification Change notice Supersedes BAP70-03_4 BAP70-03_3 BAP70-03_N_2 BAP70-03_N_1 -
*
corrections made to IR value and condition in Characteristics table
20040210 20020806 20020702 20020402
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 March 2007 Document identifier: BAP70-03_N_5
Rev. 05 - 27 March 2007
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